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  to ? 92s 1. emitter 2. collect o r 3. base jiangsu changjiang elec tron ics technology co., ltd to-92s plastic-encap sulate transistors 2sc411 5s transistor (npn) fea tures z low v ce(sat ) . z excellent current gain c haracteristics. z complements the 2sa1585s. maximum ratings (t a =25 unless otherw is e noted) symbol paramete r value unit v cbo collector-bas e voltage 40 v v ceo collector-emitter vo ltage 20 v v ebo emitter-base vo lt age 6 v i c collector curr e nt 3 a p c collector pow er dissipation 300 mw r ja thermal resist ance f rom junction to ambient 417 / w t j junction t emperature 150 t stg storage t emperature -55~+150 j c ( t www.cj-elec.com 1 www.cj-elec.com 1 3 2 equivalent circuit  c 4115s ,!- .  ///, .  ordering inform a tion part number package packing method pack quantity t o -92s bulk t o -92s tape 2s c 4115 s 2s c 4115 s -ta c4115 s sv - f,aug,2017 1000pcs/bag 3000pcs/box solid dot = green mo ldi ng compou nd device, if none, the normal device
a t =25  unless otherwise specified www.cj-elec.com 2 www.cj-elec.com f,aug,2017 parameter symbol test conditions min typ max unit co llecto r-base breakdown voltage v (b r)cb o i c = 0 .05ma,i e =0 40 v co llecto r-emitter breakdown voltage v (b r)ce o i c =1 ma,i b = 0 20 v emitter-b a se breakdown voltage v ( br )ebo i e = 0 .05ma,i c =0 6 v co llecto r cut-off current i cb o v cb = 30v ,i e = 0 0.1 a emitter cut-off current i ebo v eb =5 v ,i c = 0 0.1 a dc cu rr ent gain h fe v ce =2 v , i c = 100ma 120 560 co llecto r-emitter saturation voltage v ce (sa t) * i c =2 a,i b =0 .1 a 0.5 v co llecto r output capacitance c ob v cb = 10v ,i e =0, f=1mhz 25 pf t r ansition frequency f t v ce =2 v,i c = 0 .5a, f=100mhz 290 mhz *pulse test classifica tion of h fe ra n k q r s ra n ge 120-270 180-390 270-560
200 400 600 800 1000 0 500 1000 1500 2000 2500 3000 0.1 1 10 1 10 100 1000 0 2 04 0 6 08 01 0 0 0 50 100 150 200 250 300 1 10 100 1000 10 100 1000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.1 1 10 100 1000 200 400 600 800 1000 1200 0.1 1 10 100 1000 0 100 200 300 400 0123456 0 50 100 150 200 250 v ce =2v t a =25 t a =100 o c base- em itter voltage v be (mv ) collector current i c (m a ) i c ? ? v be 20 f=1m hz i e =0 / i c =0 t a =25 o c reverse vo lt age v (v) capacit ance c ( pf) v cb / v eb c ob / c ib ?? c ib c ob tra ns ition frequency f t (mhz ) collector current i c (m a) v ce =2v t a =25 o c i c f t ? ? 3000 v ce = 2v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? co llect or power dissipation p c (w) am bient temperature t a ( ) p c ? ? t a 3000 collector current i c (m a) base- emit ter saturation voltage v bes at (mv) t a =25 t a =100 =20 i c v be sat ?? 3000 t a =25 t a =100 =20 v ce sat ? ? i c collector-emitter saturation vo lt age v ces at (mv) collector current i c (m a) co mmon emitter t a =25 800ua 720ua 640ua 560ua 480ua 400ua 320ua 240ua 160ua i b =80ua collector-emitter voltage v ce (v) collector current i c (ma) st atic characteristic t ypical characteristics www.cj-elec.com 3 a,jun,2014 www.cj-elec.com f,aug,2017
sy mb ol d imensions in millimeters dimensions in inches min. max. min. max. a 1.420 1.620 0.056 0.064 a1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 d 3.900 4.100 0.154 0.161 d1 2.280 2.680 0.090 0.106 e 3.050 3.250 0.120 0.128 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 15.100 15.500 0.594 0.610 45 typ. 45 typ. www.cj-elec.com 4 f,aug,2017
www.cj-elec.com f,aug,2017 5


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